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NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
* LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX * HIGH OUTPUT POWER: +32 dBm TYP
5.7 MAX. 0.60.15
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
4.2 MAX. Source 1.50.2 Source
0X001
4.4 MAX.
* HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz * SINGLE SUPPLY: 2.8 to 6.0 V
A
0.40.15 5.7 MAX. 0.20.1
0.80.15
1.0 MAX.
* HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz
2
Gate
Drain
Gate
Drain
0.8 MAX. 3.60.2
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power amplier for mobile and xed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package.
APPLICATIONS
* DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets * 0.7-2.5 GHz FIXED WIRELESS ACCESS * W-LAN * SHORT RANGE WIRELESS * RETAIL BUSINESS RADIO * SPECIAL MOBILE RADIO
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE Functional Characteristics SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain Power Added Efciency Drain Current Gate-to-Source Leakage Current Saturated Drain Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Transconductance Drain-to-Source Breakdown Voltage Thermal Resistance UNITS dBm dB % mA nA nA V S V C/W 15 1.0 1.4 1.3 18 8 40 MIN 30.5 NE5520279A 79A TYP 32.0 10 45 800 100 100 1.9 VGS = 5.0 V VDS = 6.0 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS = 700 mA IDSS = 10 A Channel-to-Case MAX TEST CONDITIONS f = 1.8 GHz, VDS = 3.2 V, IDSQ = 700 mA, PIN = 25 dBm, except PIN = 5 dBm for Linear Gain
ADD
ID IGSS IDSS VTH gm BVDSS RTH
Notes: 1. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2. Pin = 5 dBm
Electrical DC Characteristics
0.90.2
California Eastern Laboratories
NE5520279A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C)
SYMBOLS VDS VGS ID ID PT TCH TSTG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test) Total Power Dissipation Channel Temperature Storage Temperature
2
RECOMMENDED OPERATING LIMITS
SYMBOLS VDS VGS IDS PIN PARAMETERS Drain to Source Voltage Gate Supply Voltage Drain Current1 Input Power f = 1.8 GHz, VDS = 3.2 V UNITS V V A dBm TYP 3.0 2.0 0.8 25 MAX 6.0 3.0 1.0 30
UNITS V V A A W C C
RATINGS 15.0 5.0 0.6 1.2 12.5 125 -55 to +125
Note: 1. Duty Cycle 50%, Ton 1 s.
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1 s.
LARGE SIGNAL IMPEDANCE
(VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz) FREQUENCY (GHz) 1.8 Zin () 1.77 -j6.71 ZOL () 1 1.25 -j5.73
ORDERING INFORMATION
PART NUMBER NE5520279A-T1 QTY * 12 mm wide embossed taping. * Gate pin faces the perforation side of the tape. * 1 kpcs/Reel
Note: 1. ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power.
NE5520279A TYPICAL PERFORMANCE CURVES
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER
35 1250
Ids(mA)
(TA = 25C) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE
35 1250
Drain Efciency, d (%) Power Added Efciency, add (%)
Output Power, Pout (dBm)
Pout 750 d IDS 20 dd 50 75
Output Power, Pout (dBm)
30
1000
100
30 IDS 25 d 20 dd
1000
100
25
750
75
500
500
50
15
250
25
15
250
25
10 5 10 15
0 20 25 30
0
10 0 1 2 3 4
0
0
Input Power,Pin (dBm) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER
35 f = 1.8 GHz VDS = 3.2 V IDQ = 700 mA Pout 2000 2500
Ids(mA)
-10
Gate to Source Voltage, Vgs (V)
IMD vs. TWO TONE OUTPUT POWER
Drain Efciency, d (%) Power Added Efciency, add (%)
Output Power, Pout (dBm)
30
-20
100
f = 1.8 GHz f = 1 MHz VDS = 3.2 V IDQ = 700 mA
-30
25 d IDS 20 dd 15
1500
IMD, (dBc)
75
-40
IM3
IM5
1000
50
-50
500
25
-60
10 5 10 15
0 20 25 30
0
-70 10
15
20
25
30
35
Input Power,Pin (dBm)
Average Two Tone Ouput Power, Pout (dBm)
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER
40 f = 2.00 GHz VDS = 5.0 V IDQ = 300 mA 2500
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE
40
Ids(mA)
2500
Ids(mA)
Pout 2000
Drain Efciency, d (%) Power Added Efciency, add (%)
Output Power, Pout (dBm)
Output Power, Pout (dBm)
35
100
35
Pout
2000
100
30
1500 d dd
75
30 d dd 25 IDS 20
1500
75
25 IDS
1000
50
1000
50
20
500
25
500
25
15 10 15 20 25 30
0 35
0
15 0 1 2 3 4
0
0
Input Power,Pin (dBm)
Gate to Source Voltage, Vgs (V)
Drain Efciency, d (%) Power Added Efciency, add (%)
f = 2.00 GHz VDS = 5.0 V Pin = 27 dBm
Drain Efciency, d (%) Power Added Efciency, add (%)
Pout
Ids(mA)
f = 1.8 GHz VDS = 3.2 V IDQ = 300 mA
f = 1.8 GHz VDS = 3.2 V Pin = 25 dBm
NE5520279A TYPICAL SCATTERING PARAMETERS (TA = 25C)
Note: This le and many other s-parameter les can be downloaded from www.cel.com
j50 j25
S11
90u
j100
120u
S21
60u
150u
30u
j10
0
10
S22
25
50
100
0
180u
S12
0u
-j10
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VD = 5.0 V, ID = 400 mA
-150u
-30u
-120u -90u
-60u
NE5520279A VD = 5.0 V, ID = 400 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.885 0.885 0.883 0.885 0.887 0.890 0.895 0.900 0.905 0.911 0.916 0.921 0.924 0.926 0.927 0.929 0.930 0.931 0.935 0.937 0.941 0.944 0.949 0.950 0.955 0.956 0.958 0.957 0.959 0.959 0.962 0.961 0.965 0.967 0.971 ANG -152.5 -166.9 -172.4 -175.6 -177.9 -179.8 178.7 177.3 176.0 174.6 173.6 172.2 171.0 169.9 168.7 167.5 166.3 165.2 164.1 162.9 161.8 160.6 159.5 158.3 157.3 156.3 155.4 154.5 153.8 152.9 152.5 151.5 150.8 150.1 149.6 MAG 11.510 5.882 3.896 2.897 2.278 1.865 1.569 1.346 1.168 1.024 0.911 0.812 0.728 0.655 0.594 0.541 0.494 0.451 0.415 0.384 0.356 0.329 0.305 0.285 0.267 0.248 0.232 0.217 0.204 0.192 0.180 0.170 0.161 0.152 0.144
S21 ANG 98.5 87.7 80.8 75.2 70.1 65.3 60.7 56.5 52.4 48.5 44.7 40.9 37.5 34.1 30.8 27.9 25.1 22.4 19.6 17.1 14.9 12.6 10.2 7.7 5.8 4.0 2.0 0.0 - 1.6 - 3.1 - 4.5 - 6.1 - 7.6 - 8.8 - 10.0 MAG 0.021 0.022 0.022 0.021 0.021 0.020 0.020 0.019 0.018 0.017 0.016 0.015 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.003
S12 ANG 10.3 0.2 - 5.2 - 9.2 - 12.9 - 15.7 - 19.3 - 21.8 - 24.5 - 27.2 - 28.8 - 30.8 - 33.3 - 33.9 - 36.0 - 36.6 - 37.3 - 38.5 - 38.5 - 38.8 - 36.9 - 40.8 - 36.6 - 36.0 - 34.6 - 32.7 - 31.4 - 27.2 - 22.0 - 5.2 - 1.3 27.2 56.3 79.5 86.6 MAG 0.830 0.833 0.840 0.849 0.851 0.856 0.861 0.869 0.876 0.882 0.894 0.898 0.903 0.907 0.914 0.921 0.925 0.926 0.930 0.937 0.942 0.941 0.942 0.947 0.952 0.953 0.952 0.954 0.958 0.961 0.960 0.960 0.964 0.965 0.963
S22 ANG -170.1 -175.4 -177.5 -178.5 -179.3 179.9 179.1 178.4 177.9 177.2 176.5 175.5 174.7 173.9 172.9 172.2 171.5 170.7 169.8 169.0 168.5 167.8 167.0 166.0 165.5 164.9 164.2 163.2 162.4 161.9 161.1 160.2 159.4 158.6 157.6
K 0.03 0.07 0.11 0.14 0.20 0.27 0.30 0.32 0.36 0.39 0.36 0.42 0.47 0.62 0.68 0.76 0.98 1.22 1.35 1.33 1.45 1.74 2.04 2.04 2.04 2.59 3.32 4.54 5.69 5.78 9.71 9.31 9.54 7.96 5.89
MAG1 (dB) 27.43 24.21 22.51 21.31 20.41 19.66 19.05 18.55 18.12 17.79 17.48 17.21 16.93 16.84 16.65 16.54 16.58 13.67 12.97 12.95 12.62 11.58 11.01 11.00 11.27 10.34 9.53 8.76 8.58 8.26 7.87 7.08 7.19 6.89 6.46
(K -
K
2
-1
). When K 1, MAG is undefined and MSG values are used.
MSG =
|S21| ,K= |S12|
1 + | | 2 - |S11| 2 - |S22| 2 2 |S12 S21|
,
= S11 S22 - S21 S12
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE5520279A APPLICATION CIRCUIT (2.40-2.48 GHz)
VG
C3 C9 C11
P1 GND
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
4.0
J3
VD
J4
C2 C8 C10
1.7
Drain
Gate
5.9
1.2
C12
J1
IN
R1 C5 C6
C14
C15
OU
A2
98
U1
C1
J2
Source Through hole 0.2 x 33 0.5 6.1 0.5
RF IN
C4
RF OUT
er=4.2 t=0.028 500855
5.74mm .30mm .63mm
J3 +Vg C13 C11 C9 C3 C2 C8 C10 C12
0.5
J4 +Vd
R1 C1 J1 RF INPUT C7 C14 C5 NE5520279A J2 RF OUTPUT
C4
C15
NE5520279A PARTS LIST
1 1 4 2 1 1 1 1 2 1 2 2 2 1 1 1 2 1 SD-500881 TF-100637 MA101J MCR03J200 600S2R7CW 600S2R2BW 600S1R2BW 600S5R6CW 600S3R3CW TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE5520279A 703401 1250-003 2052-5636-02 FD-500855B C2,C3 R1 C4 C15 C14 C1, C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB SCHEMATIC DIAGRAM NE5520279A-EVAL TEST CIRCUIT BLK 2-56 x 3/16 PHILLIPS PAN HEAD CASE 1 100pF CAP MURATA 0603 20 OHM RESISTOR ROHM 0603 2.7pF CAP ATC 0603 2.2pF CAP ATC 0805 1.2pF CAP ATC 0603 5.6pF CAP ATC 0603 3.3pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE S-BAND MODULE FABRICATION DRAWING 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
1.0
C13
NE5520279A TYPICAL APPLICATION CIRCUIT PERFORMANCE
OUTPUT POWER vs. INPUT POWER
36 f= 2.44 GHz 34 -20.0 -20.0 -20.0 32 -25.0 30 28 26
3.6 V, 300 mA
(TA = 25C)
IM3 vs. OUTPUT POWER
f= 2.44 GHz
Output Power, POUT (dBm)
IM3 (dBc)
-30.0 -35.0 -40.0
3.6 V, 300 mA
24 22 20
3.6 V, 500 mA 6.0 V, 300 mA 6.0 V, 500 mA
-45.0 -50.0 -55.0 12
3.6 V, 500 mA 6.0 V, 300 mA 6.0 V, 300 mA
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
14
16
18
20
22
24
26
28
30
Input Power, PIN (dBm)
Output Power, POUT (dBm), Each Tone
NE5520279A RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales ofce.
Soldering Method Infrared Reow
Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reow processes Maximum chlorine content of rosin ux (% mass) Peak temperature (package surface temperature) Time at temperature of 200C or higher Preheating time at 120 to 150C Maximum number of reow processes Maximum chlorine content of rosin ux (% mass) Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of ow processes Maximum chlorine content of rosin ux (% mass) Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin ux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 215C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 120C or below : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below
Condition Symbol IR260
VPS
VP215
Wave Soldering
WS260
Partial Heating
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/03/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.

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